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SI4848DY

Vishay Siliconix
Part Number SI4848DY
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Apr 8, 2005
Detailed Description N-Channel 150-V (D-S) MOSFET Si4848DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.085 at VGS = 10 V ...
Datasheet PDF File SI4848DY PDF File

SI4848DY
SI4848DY

Overview
N-Channel 150-V (D-S) MOSFET Si4848DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.
085 at VGS = 10 V 0.
095 at VGS = 6.
0 V ID (A) 3.
7 3.
5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free) Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 3.
7 2.
7 3.
0 2.
1 Pulsed Drain Current IDM 25 Avalanche Current L = 0.
1 mH IAS 10 Continuous Source Current (Diode Conduction)a IS 2.
5 1.
3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.
0 1.
9 1.
5 1.
0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 35 68 18 Maximum 42 82 23 Unit °C/W Document Number: 71356 S09-0870-Rev.
C, 18-May-09 www.
vishay.
com 1 Si4848DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V VDS = 120 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 3.
5 A VGS = 6.
0 V, ID = 3.
0 A Forward Transconductancea gfs VDS = 15 V, ID = 5 A Diode Forward Voltagea VSD IS = 2.
5 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 75 V, VGS = 10 V, ID = 3.
5 A Gate-Dra...


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