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SI4850EY

Vishay Siliconix
Part Number SI4850EY
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at V...
Datasheet PDF File SI4850EY PDF File

SI4850EY
SI4850EY

Overview
Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
022 at VGS = 10 V 60 0.
031 at VGS = 4.
5 V ID (A) 8.
5 7.
2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS 60 ± 20 Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID IDM 8.
5 6.
0 7.
1 5.
0 40 Avalanche Current IAS 15 Single Pulse Avalanche Energy Maximum Power Dissipationa TA = 25 °C TA = 70 °C EAS PD 11 3.
3 1.
7 2.
3 1.
2 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit °C/W Document Number: 71146 S09-1341-Rev.
F, 13-Jul-09 www.
vishay.
com 1 Si4850EY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VDS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 6.
0 A VGS = 10 V, ID = 6.
0 A, TJ = 125 °C VGS = 10 V, ID = 6.
0 A, TJ = 175 °C Forward Transconductancea VGS = 4.
5 V, ID = 5.
1 A gfs VDS = 15 V, ID = 6.
0 A Diode Forward Vol...


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