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SI4933DY

Vishay Siliconix
Part Number SI4933DY
Manufacturer Vishay Siliconix
Description Dual P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Dual P-Channel 12-V (D-S) MOSFET Si4933DY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.014 at VGS = -...
Datasheet PDF File SI4933DY PDF File

SI4933DY
SI4933DY

Overview
Dual P-Channel 12-V (D-S) MOSFET Si4933DY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.
014 at VGS = - 4.
5 V 0.
017 at VGS = - 2.
5 V 0.
022 at VGS = - 1.
8 V ID (A) - 9.
8 - 8.
9 - 7.
8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching SO-8 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4933DY-T1-E3 (Lead (Pb)-free) Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 9.
8 - 7.
8 - 7.
4 - 5.
9 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.
7 - 0.
9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.
0 1.
3 1.
1 0.
7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 45 85 26 Maximum 62.
5 110 35 Unit °C/W Document Number: 71980 S09-0867-Rev.
D, 18-May-09 www.
vishay.
com 1 Si4933DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 500 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.
5 V VGS = - 4.
5 V, ID = - 9.
8 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.
5 V, ID = - 8.
9 A VGS = - 1.
8 V, ID = - 5.
0 A Forward Transconductancea gfs VDS = - 10 V, ID = - 9.
8 A Dio...


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