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SI4947ADY

Vishay Siliconix
Part Number SI4947ADY
Manufacturer Vishay Siliconix
Description Dual P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Dual P-Channel 30-V (D-S) MOSFET Si4947ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.080 at VGS =...
Datasheet PDF File SI4947ADY PDF File

SI4947ADY
SI4947ADY

Overview
Dual P-Channel 30-V (D-S) MOSFET Si4947ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.
080 at VGS = - 10 V 0.
135 at VGS = - 4.
5 V ID (A) - 3.
9 - 3.
0 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4947ADY-T1-E3 (Lead (Pb)-free) Si4947ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 3.
9 - 3.
1 - 3.
0 - 2.
4 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.
7 - 1.
0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.
0 1.
2 1.
3 0.
76 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a.
Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 54 87 34 Maximum 62.
5 105 45 Unit °C/W Document Number: 71101 S09-0870-Rev.
D, 18-May-09 www.
vishay.
com 1 Si4947ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 70 °C On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 3.
9 A VGS = - 4.
5 V, ID = - 3.
0 A Forward Transconductancea gfs VDS = - 15 V, ID = - 2.
5 A Diode Forward Voltagea VSD IS = - 1.
7 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Sourc...


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