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SI4966DY

Vishay Siliconix
Part Number SI4966DY
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.025 at VGS = 4....
Datasheet PDF File SI4966DY PDF File

SI4966DY
SI4966DY

Overview
Si4966DY Vishay Siliconix Dual N-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.
025 at VGS = 4.
5 V 0.
035 at VGS = 2.
5 V ID (A) ± 7.
1 ± 6.
0 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current (10 µs Pulse Width) IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 20 ± 12 ± 7.
1 ± 5.
7 ± 40 1.
7 2 1.
3 - 55 to 150 ...


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