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SI7392DP

Vishay Siliconix
Part Number SI7392DP
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.00975...
Datasheet PDF File SI7392DP PDF File

SI7392DP
SI7392DP

Overview
Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
00975 at VGS = 10 V 0.
01375 at VGS = 4.
5 V ID (A) 15 13 PowerPAK SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.
07 mm Profile • 100 % Rg Tested • 100 % UIS Tested • Complaint to RoHS Directive 2002/95/EC 6.
15 mm D 8D 7 D 6 D 5 S 1S 5.
15 mm 2 S 3G 4 Bottom View Ordering Information: Si7392DP-T1-E3 (Lead (Pb)-free) Si7392DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 15 12 9 7 Pulsed Drain Current IDM ±...


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