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SB30W03T

Sanyo Semicon Device
Part Number SB30W03T
Manufacturer Sanyo Semicon Device
Description 30V/ 3A Rectifier
Published Apr 8, 2005
Detailed Description Ordering number:EN4445 SB30W03T Schottky Barrier Diode (Twin Type · Cathod Common) 30V, 3A Rectifier Applications · Hi...
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SB30W03T
SB30W03T

Overview
Ordering number:EN4445 SB30W03T Schottky Barrier Diode (Twin Type · Cathod Common) 30V, 3A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers).
Package Dimensions unit:mm 1254A [SB30W03T] Features · Low forward voltage (VF max=0.
55V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to highly reliable planar structure.
trr Test Circuit SANYO:TP 1:Anode 2:Cathode 3:Anode 4:Cathode unit:mm 1257A [SB30W03T] Electrical Connection 1:Anode 2:Cathode 3:Anode 4:Cathode SANYO:TP-FA Specifications Absolute Maximum Ratings at Ta = 25˚C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IO IFSM Tj Tstg 50Hz resistive load, Tc=106˚C 50Hz resistive load, Tc=104˚C, Total rating 50Hz sine wave, 1 cycle Conditions Ratings 30 35 3 6 20 –55 to +125 –55 to +125 Unit V V A A A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance (Junction-Ambient) Thermal Resistance (Junction-Case) Symbol VR VF IR C trr Rth(j-a) Rth(j-c) IR=1mA IF=3A VR=15V VR=10V, f=1MHz IF=IR=300mA, See specified Test Circuit.
90 5 160 30 Conditons Ratings min 30 0.
55 200 typ max Unit V V µA pF ns ˚C/W ˚C/W SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41098HA (KT)/42094YH (KOTO) AX-8339 No.
4445-1/3 SB30W03T No.
4445-2/3 SB30W03T No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death o...


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