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BU2527A

Philips
Part Number BU2527A
Manufacturer Philips
Description Silicon Diffused Power Transistor
Published Apr 16, 2005
Detailed Description Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New g...
Datasheet PDF File BU2527A PDF File

BU2527A
BU2527A

Overview
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
Features improved RBSOA performance and is suitable for operation up to 64 kHz.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
6.
0 1.
7 MAX.
1500 800 12 30 125 5.
0 2.
0 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 6.
0 A; IB = 1.
2 A ICM = 6.
0 A; IB(end) = 0.
55 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with...


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