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BU2520AF

SavantIC
Part Number BU2520AF
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 13, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520AF www.datasheet4u.com DESCRIPTION...
Datasheet PDF File BU2520AF PDF File

BU2520AF
BU2520AF

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520AF www.
datasheet4u.
com DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS · For use in horizontal deflection circuits of large screen colour TV receivers.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Max.
operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.
5 10 25 6 9 45 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.
datasheet4u.
com BU2520AF SYMBOL TYP.
MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V VEBO Emitter-base breakdown voltage IB=1mA ;IC=0 7.
5 13.
5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.
2 A 5.
0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.
2 A VCE=BVCES; VBE=0 Tj=125 VEB=7.
5V; IC=0 1.
1 1.
0 2.
0 1.
0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=0.
1A ; VCE=5V 13 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 9.
5 CC Collector capacitance IE=0; f=1MHz;VCB=10V 115 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com BU2520AF Fig.
2 Outline dimensions (unindicated tolerance:±0.
30mm) 3 ...


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