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IXFH6N100F

IXYS Corporation
Part Number IXFH6N100F
Manufacturer IXYS Corporation
Description Power MOSFETs
Published Apr 16, 2005
Detailed Description Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/...
Datasheet PDF File IXFH6N100F PDF File

IXFH6N100F
IXFH6N100F

Overview
Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS IXFT 6N100F ID25 RDS(on) = 1000 V = 6A = 1.
9 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 1000 1000 ± 20 ± 30 6 24 6 20 500 15 180 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ mJ V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) 1.
13/10 Nm/lb.
in.
6 4 g g Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications DC-DC converters ● Switched-mode and resonant-mode power supplies, >500kHz switching ● DC choppers ● 13.
5 MHz industrial applications ● Pulse generation ● Laser drivers ● RF amplifiers ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1000 3.
0 V 5.
5 V ±100 nA TJ = 125°C 50 µA 1 mA 1.
9 Ω VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500uA VDS = VGS, ID = 2.
5 mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 • ID25 Note 1 Advantages ● Space savings ● High power density © 2002 IXYS All rights reserved 98732B (9/02) IXFH 6N100F IXFT 6N100F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
Note 1 3 5.
5 1770 VGS = 0 V, VDS = 25 V, f = 1 MHz 186 53 11 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 2.
0 Ω (External), 8.
6 21 8.
3 54 VGS = 10...


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