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IRLW510A

Fairchild Semiconductor
Part Number IRLW510A
Manufacturer Fairchild Semiconductor
Description ADVANCED POWER MOSFET
Published Apr 16, 2005
Detailed Description $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
Datasheet PDF File IRLW510A PDF File

IRLW510A
IRLW510A

Overview
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 100V ♦ Lower RDS(ON): 0.
336Ω (Typ.
) IRLW/I510A BVDSS = 100 V RDS(on) = 0.
44Ω ID = 5.
6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak D...


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