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KM736V989

Samsung semiconductor
Part Number KM736V989
Manufacturer Samsung semiconductor
Description 512Kx36 & 1Mx18 Synchronous SRAM
Published Apr 16, 2005
Detailed Description KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SR...
Datasheet PDF File KM736V989 PDF File

KM736V989
KM736V989

Overview
KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
No.
0.
0 0.
1 0.
2 History Initial draft 1.
Update ICC & ISB values.
1.
Change ISB value from 150mA to 110mA at -67.
2.
Change ISB value from 130mA to 90mA at -72 .
3.
Change ISB value from 120mA to 80mA at -10 .
1.
Add tCYC 167MHz and 183MHz.
2.
Changed DC condition at Icc and parameters Icc ; from 420mA to 400mA at -67, from 400mA to 380mA at -72, from 350mA to 320mA at -10, 1.
Final Spec Release.
Draft Date Dec.
29.
1998 May.
27.
1999 Sep.
04.
1999 Remark Preliminary Preliminary Preliminary 0.
3 Nov.
19.
1999 Preliminary 1.
0 Dec.
08.
1999 Fina...


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