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DTC643TU

Rohm
Part Number DTC643TU
Manufacturer Rohm
Description Digital transistors
Published Apr 16, 2005
Detailed Description DTC643TU / DTC643TK Transistors Digital transistors (built-in resistor) DTC643TU / DTC643TK !Features In addition to th...
Datasheet PDF File DTC643TU PDF File

DTC643TU
DTC643TU

Overview
DTC643TU / DTC643TK Transistors Digital transistors (built-in resistor) DTC643TU / DTC643TK !Features In addition to the features of regular digital transistors.
1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.
5mA, makes these transistors ideal for muting circuits.
2) These transistors can be used at high current levels, IC=600mA.
!External dimensions (Unit : mm) UMT3 (1) 2.
0±0.
2 1.
3±0.
1 0.
9±0.
1 0.
2 0.
7±0.
1 0.
65 0.
65 (2) 1.
25±0.
1 2.
1±0.
1 0−0.
1 (3) 0.
1 0.
3 + −0 0.
15±0.
05 !Structure NPN digital transistor (Built-in resistor type) (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : R03 SMT3 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 0.
2 1.
1 + −0.
1 0.
8±0.
1 !Equivalent circuit (1) (2) (3) 0.
2 1.
6 + −0.
1 2.
8±0.
2 C B R R=4.
7kΩ E (1) Emitter (2) Base (3) Collector 0.
1 0.
4 + −0.
05 0.
1 0.
15 + −0.
06 Each lead has same dimensions Abbreviated symbol : R03 B : Base C : Collector E : Emitter !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 20 20 12 600 200 150 −55 to +150 Unit V V V mA mW °C °C 0.
3Min.
0.
1Min.
1/2 DTC643TU / DTC643TK Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions BVCBO Collector-base breakdown voltage 20 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 12 − − V IE=50µA Collector cutoff current ICBO − − 0.
5 µA VCB=20V − − 0.
5 µA VEB=12V IEBO Emitter cutoff current Collector-emitter saturation voltage VCE (sat) − 40 150 mV IC / IB=50mA / 2.
5mA hFE 820 − 2700 − VCE=5V, IC=50mA DC current transfer ratio Input resistance 3.
29 4.
7 6.
11 kΩ R1 − Transition frequency fT − 150 − MHz VCE=10V, IE= −50mA, f=100MHz Output "ON" resistance Ron − 0.
55 − Ω VI=5V, RL=1kΩ, f=1MHz ∗Transition f...


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