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IPD09N03L

Infineon Technologies AG
Part Number IPD09N03L
Manufacturer Infineon Technologies AG
Description OptiMOS Buck converter series
Published Apr 16, 2005
Detailed Description IPD09N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 8.9 30 P- TO252 -3-11 V...
Datasheet PDF File IPD09N03L PDF File

IPD09N03L
IPD09N03L

Overview
IPD09N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 8.
9 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On-Resistance R DS(on) • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter Type IPD09N03L Package Ordering Code P- TO252 -3-11 Q67042-S4110 Marking 09N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C TC=100°C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 150 10 6 ±20 100 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-17 IPD09N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
1 max.
1.
5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = V DS ID = 50 µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.
01 10 1 10.
6 7.
2 1 100 100 13.
6 8.
9 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.
5V, I D=30A Drain-source on-state resistance V GS=10V, I D=30A 1Current limited by bondwire ; with an R thJC = 1.
5K/W the chip is able to carry ID= 83A at 25°C, for...


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