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IPS022G

International Rectifier
Part Number IPS022G
Manufacturer International Rectifier
Description DUAL FULLY PROTECTED POWER MOSFET SWITCH
Published Apr 16, 2005
Detailed Description Data Sheet No.PD60203 IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Ove...
Datasheet PDF File IPS022G PDF File

IPS022G
IPS022G

Overview
Data Sheet No.
PD60203 IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.
S.
D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 5A 1.
5µs Description The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively.
They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.
These devices combine a HEXFET® POWER MOSFET and a gate driver.
They offer full protection and high reliability required in harsh environments.
The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A.
These devices restart once the input is cycled.
The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
8-Lead SOIC IPS022G (Dual) Typical Connection Load R in series (if needed) Q D IN control S S Logic signal (Refer to lead assignment for correct pin configuration) www.
irf.
com 1 IPS022G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
All voltage parameters are referenced to SOURCE lead.
(TAmbient = 25oC unless otherwise specified).
PCB mounting uses the standard footprint with 70 µm copper thickness.
Symbol Parameter Vds Vin Iin, max Isd cont.
Maximum drain to source voltage Maximum input voltage Maximum IN current Diode max.
continuous current (1) (∑ lsd mosfets, rth=125oC/W) Isd pulsed Diode max.
pulsed current (1) (for ea.
mosfet) Pd Maximum power dissipation(1) (∑ Pd mosfets, rth=125oC/W) ESD1 ESD2 T stor.
Tj max.
Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max.
storage temperature Max.
junction temperature Min.
— -0.
3 -10 Max.
47 7 +10 Units V mA Test Conditions — — 1.
4 10 A — —...


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