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IRF1104

Part Number	IRF1104
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD- 9.1724A PRELIMINARY l l l l l l IRF1104 HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistanc...
Datasheet	IRF1104 PDF File

Overview

PD- 9.
1724A PRELIMINARY l l l l l l IRF1104 HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 40V G S RDS(on) = 0.
009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred...

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