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IRF530N

Part Number	IRF530N
Manufacturer	NXP
Description	N-channel TrenchMOS transistor
Published	Apr 16, 2005
Detailed Description	Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology ...
Datasheet	IRF530N PDF File

Overview

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 1 2 3 gate source drain LIMITING VALUES Limiting values in accordance with...

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