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IRF5Y540CM

International Rectifier
Part Number IRF5Y540CM
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94017B HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y540CM 100V, N-CHANNEL Product Summary Part Number IRF5Y540...
Datasheet PDF File IRF5Y540CM PDF File

IRF5Y540CM
IRF5Y540CM

Overview
PD - 94017B HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y540CM 100V, N-CHANNEL Product Summary Part Number IRF5Y540CM BVDSS 100V RDS(on) 0.
058Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 16 72 75 0.
6 ±20 225 16 7.
5 3.
4 -55 to 150 300 (0.
063in.
/1.
6mm from case for 10sec) 4.
3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 12/04/01 IRF5Y540CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — 2.
0 11 — — — — — — — — — — — — Typ Max Units —...


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