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IRF644NS

International Rectifier
Part Number IRF644NS
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Ra...
Datasheet PDF File IRF644NS PDF File

IRF644NS
IRF644NS

Overview
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB version is currently available in a Deslecardi-pfrteieonconfiguration) Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Document Number: 91038 PD - 94859 IRF644NPbF IRF644NS IRF644NL HEXFET® Power MOSFET D VDSS = 250V RDS(on) = 240mΩ G ID = 14A S TO-220AB IRF644NPbF D2Pak IRF644NS TO-262...


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