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IRF644A

Fairchild Semiconductor
Part Number IRF644A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jan 28, 2007
Detailed Description www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower...
Datasheet PDF File IRF644A PDF File

IRF644A
IRF644A

Overview
www.
DataSheet4U.
com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 250V ♦ Lower RDS(ON): 0.
214Ω (Typ.
) 1 2 3 IRF644A BVDSS = 250 V RDS(on) = 0.
28Ω ID = 14 A TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 250 14 8.
9 56 ±30 490 14 13.
9 4.
8 139 1.
11 - 55 to +150 Units V A A V mJ A mJ V/ns W W/°C °...


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