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IRFB59N10D

International Rectifier
Part Number IRFB59N10D
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC con...
Datasheet PDF File IRFB59N10D PDF File

IRFB59N10D
IRFB59N10D

Overview
PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) max 0.
025Ω ID 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current D2Pak IRFS59N10D TO-262 IRFSL59N10D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max.
59 42 236 3.
8 200 1.
3 ± 30 3.
3 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/...


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