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IRFD9110

Fairchild Semiconductor
Part Number IRFD9110
Manufacturer Fairchild Semiconductor
Description P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon ...
Datasheet PDF File IRFD9110 PDF File

IRFD9110
IRFD9110

Overview
IRFD9110 Data Sheet January 2002 0.
7A, 100V, 1.
200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17541.
Features • 0.
7A, 100V • rDS(ON) = 1.
200Ω • Single Pulse...


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