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IRFD9220

Intersil Corporation
Part Number IRFD9220
Manufacturer Intersil Corporation
Description P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description IRFD9220 Data Sheet July 1999 File Number 2286.3 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhanceme...
Datasheet PDF File IRFD9220 PDF File

IRFD9220
IRFD9220


Overview
IRFD9220 Data Sheet July 1999 File Number 2286.
3 0.
6A, 200V, 1.
500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17502.
Features • 0.
6A, 200V • rDS(ON) = 1.
500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9220 PACKAGE HEXDIP BRAND IRFD9220 G S NOTE: When ordering, use the entire part number.
Packaging HEXDIP DRAIN GATE SOURCE 4-51 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD9220 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD9220 -200 -200 -0.
6 -4.
8 ±20 1.
0 0.
008 290 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Continuous Drain Current .
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ID Pulsed Drain Current (Note 3) .
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IDM Gate to Source Voltage...



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