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IRFG9110

International Rectifier
Part Number IRFG9110
Manufacturer International Rectifier
Description POWER MOSFET
Published Apr 16, 2005
Detailed Description PD - 90397G POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number IRFG9110 RDS(on) I D 1.4Ω -0.75A IRFG9110 JA...
Datasheet PDF File IRFG9110 PDF File

IRFG9110
IRFG9110

Overview
PD - 90397G POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number IRFG9110 RDS(on) I D 1.
4Ω -0.
75A IRFG9110 JANTX2N7335 JANTXV2N7335 REF:MIL-PRF-19500/599 100V, QUAD P-CHANNEL HEXFET MOSFET TECHNOLOGY ® HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink.
This improves thermal efficiency and reduces drain capacitance.
MO-036AB Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -0.
75 -0.
5 -3.
0 1.
4 0.
011 ±20 75 — — -5.
5 -55 to 150 300 ( 0.
063 in.
(1.
6mm) from case for 10s) 1.
3 (typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 04/16/02 IRFG9110 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown ...


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