DatasheetsPDF.com

XN1114

Part Number	XN1114
Manufacturer	Panasonic Semiconductor
Description	Silicon PNP epitaxial planer transistor
Published	Apr 16, 2005
Detailed Description	Composite Transistors XN1114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 ...
Datasheet	XN1114 PDF File

Overview

Composite Transistors XN1114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.
8 -0.
3 0.
65±0.
15 +0.
2 +0.
25 1.
5 -0.
05 5 0.
65±0.
15 1 0.
95 2.
9 -0.
05 q q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1 +0.
2 4 0.
95 3 2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06 +0.
1 1.
1 -0.
1 q UN1114 × 2 elements 0.
8 s Basic Part Number of Element +0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.
1 0.
1 to 0.
3 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 7Q Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.
3mA VCC = –5V, VB = – 0.
5V, RL = 1kΩ VCC = –5V, VB = –2.
5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 0.
17 80 10 0.
21 +30% 0.
25 –4.
9 – 0.
2 80 0.
5 0.
99 – 0.
25 V V V MHz kΩ min –50 –50 – 0.
1 – 0.
5 – 0.
2 typ max Unit V V µA µA mA Ratio between 2 elements +0.
1 1.
45±0.
1 s Features 1 Composite Transistors PT — Ta 500 XN1114 Total power dissipation PT (mW) 400 300 ...

Similar Datasheet

XN1110 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1111 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1112 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1113 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1114 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1115 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1116 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1117 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1118 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
XN1119 Silicon PNP epitaxial planer transistor - Panasonic Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)