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XN1211

Panasonic Semiconductor
Part Number XN1211
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 ...
Datasheet PDF File XN1211 PDF File

XN1211
XN1211

Overview
Composite Transistors XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.
8 -0.
3 0.
65±0.
15 +0.
2 +0.
25 1.
5 -0.
05 5 0.
65±0.
15 1 0.
95 2.
9 -0.
05 q q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1 +0.
2 4 0.
95 3 2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06 +0.
1 1.
1 -0.
1 q UN1211 × 2 elements 0.
8 s Basic Part Number of Element +0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.
1 0.
1 to 0.
3 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 9T Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.
3mA VCC = 5V, VB = 0.
5V, RL = 1kΩ VCC = 5V, VB = 2.
5V, RL = 1kΩ VCB = 10V, IE = –2mA, f = 200MHz –30% 0.
8 150 10 1.
0 +30% 1.
2 4.
9 0.
2 35 0.
5 0.
99 0.
25 V V V MHz kΩ min 50 50 0.
1 0.
5 0.
5 typ max Unit V V µA µA mA Ratio between 2 elements +0.
1 1.
45±0.
1 s Features 1 Composite Transistors PT — Ta 500 XN1211 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambie...


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