DatasheetsPDF.com

XN4114

Panasonic Semiconductor
Part Number XN4114
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XN4114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15...
Datasheet PDF File XN4114 PDF File

XN4114
XN4114

Overview
Composite Transistors XN4114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.
65±0.
15 6 0.
95 2.
8 –0.
3 +0.
2 +0.
25 1.
5 –0.
05 0.
65±0.
15 1 0.
3 –0.
05 2.
9 –0.
05 q q Two elements incorporated into one package.
(Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1 +0.
2 5 2 0.
95 4 3 s Basic Part Number of Element q 1.
1–0.
1 0.
4±0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: BK Internal Connection 6 Tr1 1 2 3 ˚C 5 4 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.
3mA VCC = –5V, VB = – 0.
5V, RL = 1kΩ VCC = –5V, VB = –2.
5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 0.
17 80 10 0.
21 +30% 0.
25 –4.
9 – 0.
2 80 – 0.
25 V V V MHz kΩ min –50 –50 – 0.
1 – 0.
5 – 0.
2 typ max Unit V V µA µA mA 0 to 0.
05 UN1114 × 2 elements 0.
1 to 0.
3 0.
8 0.
16–0.
06 +0.
2 +0.
1 1.
45±0.
1 s Features 0.
5 –0.
05 +0.
1 +0.
1 1 Composite Transistors PT — Ta 500 XN4114 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE –160 –100 VCE...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)