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XP01531

Panasonic Semiconductor
Part Number XP01531
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XP01531 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.65 s Fe...
Datasheet PDF File XP01531 PDF File

XP01531
XP01531

Overview
Composite Transistors XP01531 Silicon NPN epitaxial planer transistor Unit: mm 2.
1±0.
1 0.
425 1.
25±0.
1 0.
425 0.
65 s Features q q Two elements incorporated into one package.
(Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1 1 2 3 5 0.
65 4 0.
2 q 2SC3130 × 2 elements 0.
7±0.
1 s Basic Part Number of Element 0.
9± 0.
1 0.
12 – 0.
02 0.
2±0.
1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25˚C) Ratings 15 10 3 50 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 9F Internal Connection 1 2 3 4 Tr1 5 0 to 0.
1 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Collector to base parameter Common base reverse transfer capacitance (Ta=25˚C) Symbol VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob rbb'·CC Crb Conditions IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = –5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = –5mA, f = 31.
9MHz VCB = 4V, IE = 0, f = 1MHz 1.
4 1.
9 0.
9 11.
8 0.
25 75 200 min 10 3 1 10 400 0.
5 2.
5 1.
1 13.
5 0.
35 V GHz pF ps pF typ max Unit V V µA µA +0.
05 0.
2±0.
05 For high frequency, oscillation and mixing 1 Composite Transistors PT — Ta 200 80 Ta=25˚C 50 25˚C Ta=75˚C 40 XP01531 IC — VCE 60 VCE=4V IC — VBE Total power dissipation PT (mW) 180 Collector current IC (mA) 60 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 IB=500µA 40 400µA 300µA 20 200µA 100µA 0 0 2 4 6 8 10...


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