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XP1216

Panasonic Semiconductor
Part Number XP1216
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XP1216 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.1...
Datasheet PDF File XP1216 PDF File

XP1216
XP1216

Overview
Composite Transistors XP1216 Silicon NPN epitaxial planer transistor Unit: mm 2.
1±0.
1 0.
425 1.
25±0.
1 0.
425 0.
2±0.
05 0.
12 – 0.
02 +0.
05 For switching/digital circuits 0.
65 s Features q q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1 1 2 3 5 0.
65 4 0.
9± 0.
1 q UN1216 × 2 elements 0.
7±0.
1 s Basic Part Number of Element 0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) Marking Symbol: 9N Internal Connection 1 2 3 4 Tr1 5 0 to 0.
1 0.
2±0.
1 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance * Ratio between 2 elements (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)* VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.
3mA VCC = 5V, VB = 0.
5V, RL = 1kΩ VCC = 5V, VB = 2.
5V, RL = 1kΩ VCB = 10V, IE = –2mA, f = 200MHz –30% 150 4.
7 +30% 4.
9 0.
2 160 0.
5 0.
99 0.
25 V V V MHz kΩ min 50 50 0.
1 0.
5 0.
01 460 typ max Unit V V µA µA mA 1 Composite Transistors PT — Ta 250 XP1216 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VC...


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