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XP4313

Panasonic Semiconductor
Part Number XP4313
Manufacturer Panasonic Semiconductor
Description Composite Transistors
Published Apr 16, 2005
Detailed Description Composite Transistors XP04313 (XP4313) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) ...
Datasheet PDF File XP4313 PDF File

XP4313
XP4313

Overview
Composite Transistors XP04313 (XP4313) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half (0.
425) Unit: mm 0.
12+0.
05 –0.
02 0.
2±0.
05 6 5 4 1.
25±0.
10 2.
1±0.
1 1 2 3 (0.
65) (0.
65) ■ Basic Part Number • UNR2213 (UN2213) + UNR2113 (UN2113) 10˚ 1.
3±0.
1 2.
0±0.
1 0.
9±0.
1 Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 150 150 −55 to +150 Unit 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 0 to 0.
1 V V mA V V mA mW °C °C Marking Symbol: BZ Internal Connection 6 Tr1 Tr2 1 2 3 5 4 Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003 SJJ00178CED 0.
9+0.
2 –0.
1 ■ Absolute Maximum Ratings Ta = 25°C 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package 0.
2±0.
1 5˚ 1 XP04313 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.
3 mA VCC = 5 V, VB ...


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