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XP6116

Panasonic Semiconductor
Part Number XP6116
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Published Apr 16, 2005
Detailed Description Composite Transistors XP6116 Silicon PNP epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For switch...
Datasheet PDF File XP6116 PDF File

XP6116
XP6116

Overview
Composite Transistors XP6116 Silicon PNP epitaxial planer transistor Unit: mm 0.
425 1.
25±0.
1 0.
425 0.
2±0.
05 For switching/digital circuits 2.
1±0.
1 0.
65 q q Two elements incorporated into one package.
(Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1 s Features 0.
65 1 2 3 6 5 4 0.
2 0.
9±0.
1 s Basic Part Number of Element q 0 to 0.
1 UN1116 × 2 elements 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 0.
7±0.
1 0.
2±0.
1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 6Y Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.
3mA VCC = –5V, VB = – 0.
5V, RL = 1kΩ VCC = –5V, VB = –2.
5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 80 4.
7 +30% –4.
9 – 0.
2 160 0.
5 0.
99 – 0.
25 V V V MHz kΩ min –50 –50 – 0.
1 – 0.
5 – 0.
01 460 typ max Unit V V µA µA mA Ratio between 2 elements 0.
12 –0.
02 +0.
05 1 Composite Transistors PT — Ta 250 XP6116 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE –1...


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