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ZC822

Zetex Semiconductors
Part Number ZC822
Manufacturer Zetex Semiconductors
Description SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
Published Apr 16, 2005
Detailed Description 830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A ra...
Datasheet PDF File ZC822 PDF File

ZC822
ZC822

Overview
830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering.
Featuring closely controlled CV characteristics and high Q.
Low reverse current ensures very low phase noise performance.
Available in single or dual common cathode format in a wide rage of miniature surface mount packages.
Features · Close tolerance C-V characteristics · High tuning ratio · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communications · Pagers · Mobile radio *Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series ISSUE 6 - JANUARY 2002 1 830 series TUNING CHARACTERISTICS at Tamb = 25°C PART Capacitance (pF) V R =2V, f=1MHz MIN.
829A 829B 830A 830B 831A 831B 832A 832B 833A 833B 834A 834B 835A 835B 836A 836B 7.
38 7.
79 9.
0 9.
5 13.
5 14.
25 19.
8 20.
9 29.
7 31.
35 42.
3 44.
65 61.
2 64.
6 90.
0 95.
0 NOM.
8.
2 8.
2 10.
0 10.
0 15.
0 15.
0 22.
0 22.
0 33.
0 33.
0 47.
0 47.
0 68.
0 68.
0 100.
0 100.
0 MAX.
9.
02 8.
61 11.
0 10.
5 16.
5 15.
75 24.
2 23.
1 36.
3 34.
65 51.
7 49.
35 74.
8 71.
4 110.
0 105.
0 250 250 300 300 300 300 200 200 200 200 200 200 100 100 100 100 Min Q V R =3V f=50MHz MIN.
4.
3 4.
3 4.
5 4.
5 4.
5 4.
5 5.
0 5.
0 5.
0 5.
0 5.
0 5.
0 5.
0 5.
0 5.
0 5.
0 Capacitance Ratio C 2 / C 20 at f=1MHz MAX.
5.
8 5.
8 6.
0 6.
0 6.
0 6.
0 6.
5 6.
5 6.
5 6.
5 6.
5 6.
5 6.
5 6.
5 6.
5 6.
5 ABSOLUTE MAXIMUM RATINGS PARAMETER Forward current Power dissipation at T amb = 25 Њ C SOT23 Power dissipation at T amb = 25 Њ C SOD323 Power dissipation at T amb = 25 Њ C SOD523 Operating and storage temperature range SYMBOL IF P tot P tot P tot MAX 200 330 330 250 -55 to +150 UNIT mA mW mW mW ЊC ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER Reverse breakdown voltage Reverse voltage leakage Temperature coefficient of capacitance CONDITIONS I R = 10uA V R = 20V V R = 3V, f = 1M...


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