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ZC833

Part Number	ZC833
Manufacturer	Zetex Semiconductors
Description	SOT23 SILICON VARIABLE CAPACITANCE DIODES
Published	Apr 16, 2005
Detailed Description	SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High T...
Datasheet	ZC833 PDF File

Overview

SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Forward Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg MAX 200 330 SOT23 UNIT mA mW °C -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb =25°C) PARAMETER Reverse Breakdown Voltage Reverse Voltage Leakage Temperature Coefficient of Capacitance SYMBOL VBR IR MIN 25 0.
2 0.
03 10 0.
04 TYP MAX UNIT CONDITIONS V nA %/°C I R =10 µ A V R=20V V R=3V, f=1MHz η ...

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