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ZDT749

Zetex Semiconductors
Part Number ZDT749
Manufacturer Zetex Semiconductors
Description DUAL PNP MEDIUM POWER TRANSISTORS
Published Apr 16, 2005
Detailed Description SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT749 C1 C1 C2 C2 PARTMARKING DETAIL – T749 B1 E1 B2 ...
Datasheet PDF File ZDT749 PDF File

ZDT749
ZDT749

Overview
SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT749 C1 C1 C2 C2 PARTMARKING DETAIL – T749 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -35 -25 -5 -6 -2 -55 to +150 UNIT V V V A A °C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally SYMBOL Ptot VALUE 2.
25 2.
75 18 22 55.
6 45.
5 UNIT W W mW/ °C mW/ °C °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
3 - 351 ZDT749 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN.
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 100 -0.
12 -0.
23 -0.
9 -0.
8 200 200 150 50 160 55 40 450 100 -35 -25 -5 -0.
1 -10 -0.
1 -0.
3 -0.
5 -1.
25 -1 TYP.
MAX.
UNIT V V V µA µA µA CONDITIONS.
IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-30V VCB=-30V,T amb =100°C VEB=-4V, IE=0 IC=1A, IB=-100mA* IC=2A, IB=-200mA* IC=1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* V V V V 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff MHz pF ns ns IC=-100mA, VCE=-5V f=100MHz VCB=-10V f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA *Measured under pulsed conditions.
Pulse width=300µs.
Duty...


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