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VMB10-12S

Part Number	VMB10-12S
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Apr 16, 2005
Detailed Description	VMB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB10-12S is Designed for PACKAGE STYLE .380 4L STUD .1...
Datasheet	VMB10-12S PDF File

Overview

VMB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB10-12S is Designed for PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: • • • Omnigold™ Metalization System B ØC MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O D H I J 2.
0 A #8-32 UNC-2A G F E 36 V 18 V DIM MINIMUM inches / mm MAXIMUM inches / mm 36 V 4.
0 V 20 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 5.
0 OC/W O O O A B C D E F G H I J .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 ORDER CODE: ASI10742 O CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC IC = 15 mA IC = 50 mA TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.
0 1.
0 UNITS V V V mA --pF dB IE = 2.
5 mA VCB = 12.
5 V VCE = 5.
0 V VCB = 12.
5 V VCC = 12.
5 V POUT = 10 W IC = 250 mA f = 1.
0 MHz f = 88 MHz 5.
0 200 65 13 60 % A D V...

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