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VMB40-12S

Advanced Semiconductor
Part Number VMB40-12S
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Apr 16, 2005
Detailed Description VMB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB40-12S is Designed for PACKAGE STYLE .380 4L STUD .1...
Datasheet PDF File VMB40-12S PDF File

VMB40-12S
VMB40-12S

Overview
VMB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB40-12S is Designed for PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: • • • Omnigold™ Metalization System B ØC D H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 5.
0 A 36 V DIM #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm 18 V 4.
0 V 70 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.
5 OC/W O O O O A B C D E F G H I J .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 ORDER CODE: ASI10744 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICES hFE COB PG ηC IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 36 4.
0 5.
0 UNITS V V V V mA --pF dB VCE = 12.
5 V VCE = 5.
0 V VCB = 12.
5 V VCC = 12.
5 V POUT = 40 W IC = 5.
0 A f = 1.
0 MHz f = 88 MHz 10 60 20 200 16...


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