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VP0104

Supertex Inc
Part Number VP0104
Manufacturer Supertex Inc
Description P-Channel Vertical DMOS FETs
Published Apr 16, 2005
Detailed Description Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► Free from secondary breakdown ►► Low p...
Datasheet PDF File VP0104 PDF File

VP0104
VP0104

Overview
Supertex inc.
VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain Applications ►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information Product Summary Part Number VP0104N3-G Package Option TO-92 Packing 1000/Bag BVDSS/BVDGS RDS(ON) (max) ID(ON) (min) VP0104N3-G P002 VP0104N3-G P003 -40V 8.
0Ω -500mA VP0104N3-G P005 VP0104N3-G P013 TO-92 2000/Reel Pin Configuration VP0104N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN Absolute Maximum Ratings SOURCE Parameter Value Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage BVDSS BVDGS ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is ...


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