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VQ3001J

Vishay Siliconix
Part Number VQ3001J
Manufacturer Vishay Siliconix
Description Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
Published Apr 16, 2005
Detailed Description VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) N-Channel P-Chann...
Datasheet PDF File VQ3001J PDF File

VQ3001J
VQ3001J

Overview
VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) N-Channel P-Channel 30 –30 rDS(on) Max (W) 1 @ VGS = 12 V 2 @ VGS = –12 V VGS(th) (V) 0.
8 to 2.
5 –2 to –4.
5 ID (A) 0.
85 –0.
6 FEATURES D D D D D Low On-Resistance: 0.
8/1.
6 W Low Threshold: 1.
5/–3.
1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code P Device Marking Top View VQ3001J “S” fllxxyy VQ3001P “S” fllxxyy Top View Plastic: VQ3001J Sidebraze: VQ3001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage VQ3001J Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a.
Pulse width limited by maximum junction temperature.
Document Number: 70221 S-04279—Rev.
D, 16-Jul-01 www.
vishay.
com TA= 25_C TA= 100_C VQ3001P TA= 25_C TA= 100_C VGS ID IDM PD RthJA TJ, Tstg Symbol VDS N-Channel 30 "20 "20 0.
85 0.
52 3 1.
3 0.
52 96.
2 –55 to 150 P-Channel 30 "20 "20 –0.
6 –0.
37 –2 1.
3 0.
52 96.
2 Total Quad Unit V A 2 0.
8 62.
5 –55 to 150 W _C/W _C 11-1 VQ3001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits N-Channel Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage V(BR)DSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = –10 mA VDS = VGS, ID = 1 mA VGS(th) VDS = VGS, ID = –1 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS VD...


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