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VFT80-28

Part Number	VFT80-28
Manufacturer	Advanced Semiconductor
Description	VHF POWER MOSFET N-Channel Enhancement Mode
Published	Apr 16, 2005
Detailed Description	VFT80-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT80-28 is Designed for General Purpose Class B ...
Datasheet	VFT80-28 PDF File

Overview

VFT80-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT80-28 is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz.
PACKAGE STYLE .
380 4L FLG B .
112 x 45° A FEATURES: • PG = 10 dB Typical at 175 MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System F S G C D E D S Ø.
125 NOM.
FULL R J .
125 MAXIMUM RATINGS IC VCB VCE PDISS TJ T STG θ JC O I GH 10 A DIM MINIMUM inches / mm MAXIMUM inches / mm 60 V 35 V 140 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 1.
5 OC/W O A B C D E F G H I J .
220 / 5.
59 .
785 / 19.
94 .
720 / 18.
29 .
970 / 24.
64 .
004 / 0.
10 .
085 / 2.
16 .
160 / 4.
06 .
240 / 6.
10 .
230 / 5.
84 .
730 / 18.
54 .
980 / 24.
89 .
385 / 9.
78 .
006 / 0.
15 .
105 / 2.
67 .
180 / 4.
57 .
280 / 7.
11 .
255 / 6.
48 ORDER CODE: ASI10705 NONE CHARACTERISTICS SYMBOL BV DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG ηD ψ TC = 25 OC TEST CONDITIONS ID = 100 mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 2 A VGS = 0 V VGS = 20 V VDS = 10 V VDS = 10 V MINIMUM 60 TYPICAL MAXIMUM 5.
0 1.
0 UNITS V mA µA V mS 1.
0 1200 105 165 20 10 50 12 60 6.
0 VDS = 28 V VDD = 28 V VGS = 0 V IDQ = 25 mA f = 1.
0 MHz Pout = 80 W f = 175 MHz pF dB % VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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VFT80-28 VHF POWER MOSFET N-Channel Enhancement Mode - Advanced Semiconductor

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