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VHB50-28S

Part Number	VHB50-28S
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Apr 16, 2005
Detailed Description	VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is Designed for PACKAGE STYLE .380 4L STUD .1...
Datasheet	VHB50-28S PDF File

Overview

VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is Designed for PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: • • • Omnigold™ Metalization System B ØC D H I J MAXIMUM RATINGS #8-32 UNC-2A G F E IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 6.
5 A 65 V 35 V 4.
0 V 75 W -65 OC to +200 OC -65 OC to +150 OC 2.
3 OC/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 ORDER CODE: ASI10730 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Cob fT PG ηC TC = 25 C O NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 28 V VCE = 28 V VCE = 5.
0 V VCB = 28 V VCE = 10 V VCE = 28 V IC = 500 mA POUT = 50 W IC = 500 mA f = 1.
0 MHz f = 100 MHz f = 150 MHz TC = 125 C O MINIMUM TYPICAL MAXIMUM 35 65 4.
0 2.
0 10 5.
0 --80 200 6.
0 60 UNITS V V V mA mA --pF MHz dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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