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UPG2009TB

Part Number	UPG2009TB
Manufacturer	NEC
Description	L-BAND HIGH POWER SPDT SWITCH
Published	Apr 16, 2005
Detailed Description	DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT ...
Datasheet	UPG2009TB PDF File

Overview

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application.
The device can operate from 500 MHz to 2.
5 GHz, having the low insertion loss and high isolation by 2.
8 V control voltage.
FEATURES • Low insertion loss : LINS = 0.
25 dB TYP.
@ Vcont1/2 = 2.
8 V/0 V, f = 1.
0 GHz LINS = 0.
30 dB TYP.
@ Vcont1/2 = 2.
8 V/0 V, f = 2.
0 GHz • High isolation : ISL = 28 dB TYP.
@ Vcont1/2 = 2.
8 V/0 V, f = 2.
0 GHz • High power : Pin (0.
1dB) = 34 dBm TYP.
@ Vcont1/2 = 2.
8 V/0 V, f = 1.
0 GHz • 6-pin super minimold package (2.
0 ×...

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