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TSTS730

Vishay Telefunken
Part Number TSTS730
Manufacturer Vishay Telefunken
Description GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
Published Apr 16, 2005
Detailed Description TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are...
Datasheet PDF File TSTS730 PDF File

TSTS730
TSTS730


Overview
TSTS730.
Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730.
series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package.
Their glass lenses provide a high radiant intensity without external optics.
Features D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Tcase 25 °C tp/T = 0.
5, tp 100 ms, Tcase 25 °C tp 100 ms Symbol VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC Value 5 250 500 2.
5 170 500 100 –55.
.
.
+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W x x x x Tcase x 25 °C Document Number 81048 Rev.
2, 20-May-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (5) TSTS730.
Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Power Temp.
Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise Time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp 20 ms IF = 100 mA x x Symbol VF V(BR) Cj TKfe ϕ Min 5 Typ 1.
3 30 7 –0.
8 ±12 950 50 400 400 Max 1.
7 fe IF = 100 mA IF = 100 mA IF = 1.
5 A, tp/T = 0.
01, tp 10 ms IF = 1.
5 A, tp/T = 0.
01, tp 10 ms lp Dl tr tf x x Unit V V pF mW %/K deg nm nm ns ns Type Dedicated Characteristics Tamb = 25_C Parameter Radiant Intensity y Test Conditions IF=100mA, tp=20ms Type TSTS7300 TSTS7301 TSTS7302 TSTS7303 Symbol Ie Ie Ie Ie Min 4 6.
3 10 16 Typ 6.
3 10 16 25 Max 12.
5 20 32 Unit mW/sr mW/sr mW/sr mW/sr Typical Characteristics (Tamb = 2...


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