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TV3010M

Dynex Semiconductor
Part Number TV3010M
Manufacturer Dynex Semiconductor
Description Rectifier Diode
Published Apr 16, 2005
Detailed Description TV30 TV30 Rectifier Diode Replaces November 1999 version, DS4086-3.0 DS4086-4.0 January 2000 APPLICATIONS s Rectificat...
Datasheet PDF File TV3010M PDF File

TV3010M
TV3010M

Overview
TV30 TV30 Rectifier Diode Replaces November 1999 version, DS4086-3.
0 DS4086-4.
0 January 2000 APPLICATIONS s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers KEY PARAMETERS VRRM 2000V IF(AV) 335A IFSM 6000A FEATURES s High Surge Capability VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 2000 1400 1000 600 Conditions TV30 20 M or K(R) TV30 14 M or K(R) TV30 10 M or K(R) TV30 06 M or K(R) VRSM = VRRM + 100V Lower voltage grades available.
M for M16 thread.
K for 3/4" - 16UNF thread, R for reverse polarity.
Outline type code: DO9 See Package Details for further information.
CURRENT RATINGS Symbol Single Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 335 525 440 A A A Parameter Conditions Max.
Units 1/7 TV30 SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase =175oC VR = 0 Max.
4.
8 115 x 106 6.
0 180 x 103 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 35.
0Nm with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Mounting Torque -55 30.
0 175 200 35.
0 o Conditions Min.
- Max.
0.
13 0.
06 175 Units o C/W o C/W o C C C o Nm CHARACTERISTICS Symbol VFM IRRM QS IRM trr VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current reverse recovery time Threshold voltage Slope resistance At Tvj = 175˚C At Tvj = 175˚C IF = 200A, dIRR/dt = 20A/µs, Tcase = 25˚C Conditions At 1000A peak, Tcase = 25oC At VRRM, Tcase = 175oC Typ.
300* 90* 6.
5* Max.
1.
4 20 0.
8 ...


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