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TVV007

Part Number	TVV007
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Apr 16, 2005
Detailed Description	TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for D PACKAGE STYLE .500 6L FLG C A 2x ...
Datasheet	TVV007 PDF File

Overview

TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for D PACKAGE STYLE .
500 6L FLG C A 2x ØN FULL R FEATURES: • • • Omnigold™ Metalization System DIM B G .
725/18,42 F K H MINIMUM inches / mm E M L J I MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC O A B C D E F G H I J K L M N .
150 / 3.
43 .
045 / 1.
14 .
210 / 5.
33 .
835 / 21.
21 .
200 / 5.
08 .
490 / 12.
45 .
003 / 0.
08 .
125 / 3.
18 .
725 / 18.
42 .
970 / 24.
64 .
090 / 2.
29 .
150 / 3.
81 .
160 / 4.
06 10 A 60 V 35 V 140 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 3.
3 OC/W O .
220 / 5.
59 .
865 / 21.
97 .
210 / 5.
33 .
510 / 12.
95 .
007 / 0.
18 .
980 / 24.
89 .
105 / 2.
67 .
170 / 4.
32 .
285 / 7.
24 .
120 / 3.
05 .
135 / 3.
43 ORDER CODE: ASI10655 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE PG IMD1 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.
0 5 UNITS V V V mA --dB dBc VCE = 5.
0 V VCE = 28 V POUT = 7.
5 W IC = 1.
0 A IC ...

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