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U130A

Fairchild Semiconductor
Part Number U130A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Apr 16, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File U130A PDF File

U130A
U130A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
092 Ω (Typ.
) IRFR/U130A BVDSS = 100 V RDS(on) = 0.
11 Ω ID = 13 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C) * Ο Ο Ο Value 100 13 8.
2 1 O Units V A A V mJ A mJ V/ns W W W/ C Ο 52 + _ 20 225 13 4.
1 6.
5 2.
5 41 0.
32 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes,...


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