DatasheetsPDF.com

TN6714A

Fairchild Semiconductor
Part Number TN6714A
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Apr 16, 2005
Detailed Description TN6714A / NZT6714 Discrete POWER & Signal Technologies TN6714A NZT6714 C E C C TO-226 BE B SOT-223 NPN General P...
Datasheet PDF File TN6714A PDF File

TN6714A
TN6714A


Overview
TN6714A / NZT6714 Discrete POWER & Signal Technologies TN6714A NZT6714 C E C C TO-226 BE B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.
5 A.
Sourced from Process 37.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 30 40 5.
0 2.
0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6714A 1.
0 8.
0 50 125 Max *NZT6714 1.
0 8.
0 125 Units W mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.
5 mm; mounting pad for the collector lead min.
6 cm2.
© 1997 Fairchild Semiconductor Corporation TN6714A / NZT6714 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA= 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 100 µA, I E = 0 I E = 100 µ A, IC = 0 VCB = 40 V, IE = 0 VEB = 5.
0 V, IC = 0 30 40 5.
0 0.
1 0.
1 V V V µA µA ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 1.
0 V IC = 100 mA, VCE = 1.
0 V IC = 1.
0 A, VCE = 1.
0 V IC = 1.
0 A, IB = 100 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)