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TN0200T

Vishay Siliconix
Part Number TN0200T
Manufacturer Vishay Siliconix
Description Specification Comparison TN0200K vs. TN0200T
Published Apr 16, 2005
Detailed Description TN0200T/TS Vishay Siliconix N-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY ID (A) VDS (V) 20 rDS(on) (W) 0.4 @ VGS = 4.5...
Datasheet PDF File TN0200T PDF File

TN0200T
TN0200T

Overview
TN0200T/TS Vishay Siliconix N-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY ID (A) VDS (V) 20 rDS(on) (W) 0.
4 @ VGS = 4.
5 V 0.
5 @ VGS = 2.
5 V TN0200T 0.
73 0.
65 TN0200TS 1.
2 1.
1 FEATURES D D D D D Low On-Resistance: 0.
29 W Low Threshold: 0.
9 V (typ) 2.
5-V or Lower Operation Fast Switching Speed: 22 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Low Battery Voltage Operation APPLICATIONS D D D D D Direct Logic-Level Interfact: TTL/CMOS Dirvers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching−Cell Phones, Pagers TO-236 (SOT-23) Top View G 1 3 S 2 D Marking Code: TN0200T: NOwll TN0200TS: NSwll w = Week Code ll = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg TN0200T 20 "8 0.
73 0.
58 4 0.
6 0.
35 0.
22 TN0200TSc 20 "8 1.
2 1.
0 4 1.
0 1.
0 0.
65 Unit V A W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Notes a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board, t v 10 sec.
c.
Copper lead frame.
Document Number: 70202 S-40277—Rev.
F, 23-Feb-04 www.
vishay.
com Symbol RthJA TN0200T 357 TN0200TSc 125 Unit _C/W 1 TN0200T/TS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V TJ = 85_C VDS w 5 V, VGS = 4.
5 V VDS w 5 V, VGS = 2.
5 V VGS = 4.
5 V, ID = 0.
6 A VGS = 2.
5 V, ID = 0.
6...


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