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TN3725A

Fairchild Semiconductor
Part Number TN3725A
Manufacturer Fairchild Semiconductor
Description NPN Switching Transistor
Published Apr 16, 2005
Detailed Description TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C ...
Datasheet PDF File TN3725A PDF File

TN3725A
TN3725A

Overview
TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.
0 A.
Sourced from Process 25.
Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.
0 1.
2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die TN3725A 1.
0 8.
0 50 125 Max MMPQ3725 1.
0 8.
0 Units W mW/ °C °C/W °C/W °C/W °C/W 125 240 © 1997 Fairchild Semiconductor Corporation TN3725A / MMPQ3725 NPN Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA= 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current I C = 10 mA, IB = 0 I C = 10 µ A, VBE = 0 I C = 10 µ A, ICE = 0 I E = 10 µ A, IC = 0 VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 100°C VCE = 80 V, VEB = 0 40 60 60 6.
0 1.
7 120 10 V V V V µA µA µA ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 1.
0 V IC = 100 mA, VC...


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