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TODV1225

STMicroelectronics
Part Number TODV1225
Manufacturer STMicroelectronics
Description ALTERNISTORS
Published Apr 16, 2005
Detailed Description TODV 625 ---> 1225 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 88 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (U...
Datasheet PDF File TODV1225 PDF File

TODV1225
TODV1225

Overview
TODV 625 ---> 1225 ALTERNISTORS .
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FEATURES HIGH COMMUTATION : > 88 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 625 ---> 1225 use high performance passivated glass alternistor technology.
Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer.
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) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter Tc = 80 °C Value 25 Unit A RD91 (Plastic) ITSM tp = 2.
5 ms tp = 8.
3 ms tp = 10 ms 390 250 230 265 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.
5 mm from case °C °C °C Symbol Parameter 625 825 800 TODV 1025 1000 1225 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 600 V March 1995 1/5 TODV 625 ---> 1225 THERMAL RESISTANCES Symbol Rth (c-h) Parameter Contact (case-heatsink) with grease Value 0.
1 1.
6 1.
2 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL VD=12V VD=12V (DC) (DC) Test Conditions RL =33Ω RL =33Ω Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 35A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=125°C Tj=125°C TYP MAX MAX MAX MIN MAX MAX MIN TYP TYP Value 150 1.
5 0.
2 2.
5 100 200 50 1.
8 0.
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