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TODV1040

STMicroelectronics
Part Number TODV1040
Manufacturer STMicroelectronics
Description ALTERNISTORS
Published Apr 16, 2005
Detailed Description TODV 640 ---> 1240 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 142 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (...
Datasheet PDF File TODV1040 PDF File

TODV1040
TODV1040

Overview
TODV 640 ---> 1240 ALTERNISTORS .
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FEATURES HIGH COMMUTATION : > 142 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 640 ---> 1240 use a high performance passivated glass alternistor technology.
Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer.
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) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter Tc = 75 °C Value 40 Unit A RD91 (Plastic) ITSM tp = 2.
5 ms tp = 8.
3 ms tp = 10 ms 590 370 350 610 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.
5 mm from case °C °C °C Symbol Parameter 640 840 800 TODV 1040 1000 1240 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 600 V March 1995 1/5 TODV 640 ---> 1240 THERMAL RESISTANCES Symbol Rth (c-h) Parameter Contact (case-heatsink) with grease Value 0.
1 1.
2 0.
9 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP Value 200 1.
5 0.
2 2.
5 Unit mA V V µs mA VD=VDRM RL=3.
3kΩ VD=VDRM IG = 500mA dIG/dt = 3A/µs IG=1.
2 IGT IL I-III II TYP 100 200 IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM = 60A tp= 380µs VDR...


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